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june 2010 doc id 15661 rev 3 1/13 13 STD55N4F5 n-channel 40 v, 7.3 m ? , 40 a, dpak stripfet? v power mosfet features standard threshold drive 100% avalanche tested surface mounting dpak (to-252) applications switching applications ? automotive description the STD55N4F5 is a n-channel stripfet tm v. this power mosfet technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (fom). figure 1. internal schematic diagram type v dss r ds(on) max i d pw STD55N4F5 40 v < 8.5 m ? 55 a 60 w dpak 1 3 !-v $4!"or ' 3 table 1. device summary order code marking package packaging STD55N4F5 55n4f5 dpak tape and reel www.st.com
contents STD55N4F5 2/13 doc id 15661 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STD55N4F5 electrical ratings doc id 15661 rev 3 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parame ter value unit v ds drain-source voltage (v gs =0) 40 v v gs gate-source voltage 20 v i d (1) 1. current limited by package drain current (continuous) at t c = 25 c 55 a i d drain current (continuous) at t c = 100 c 39 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 220 a p tot total dissipation at t c = 25 c 60 w derating factor 0.4 w/c dv/dt (3) 3. i sd 55 a, di/dt 400 a/s, v ds v (br)dss , tj tjmax peak diode recovery voltage slope 15 v/ns e as (4) 4. starting t j = 25 c, i d = 27.5 a, v dd = 25 v single pulse avalanche energy 100 mj t j t stg operating junction temperature storage temperature - 55 to 175 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case max 2.5 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 2oz cu board thermal resistance junc tion-ambient max 50 c/w
electrical characteristics STD55N4F5 4/13 doc id 15661 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. static symbol parameter test cond itions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 27.5 a 7.3 8.5 m ? table 5. dynamic symbol parameter test conditions min typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 - 1600 230 30 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =20 v, i d = 27.5 a v gs =10 v figure 14 - 25 7 6 - nc nc nc
STD55N4F5 electrical characteristics doc id 15661 rev 3 5/13 table 6. switching on/off (resistive load) symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =20 v, i d = 27.5 a, r g =4.7 ?, v gs =10 v figure 16 - 15 15 - ns ns t d(off) t f turn-off delay time fall time v dd =20 v, i d = 27.5 a, r g =4.7 ?, v gs =10 v figure 16 - 25 6 - ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 55 220 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd =55 a, v gs =0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =55 a, di/dt = 100 a/s, v dd = 32 v, tj=150 c figure 15 - 40 55 3 ns nc a
electrical characteristics STD55N4F5 6/13 doc id 15661 rev 3 2.1 electrical characteristi cs (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=175c tc=25c s ingle p u l s e 0.01 am07069v1 10 -5 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.05 0.02 0.01 s ingle p u l s e =0.5 0.2 0.1 10 0 am07070v1 i d 60 40 20 0 0 2 v d s (v) 4 (a) 1 3 8 0 100 5v 6v 4v v g s =10v 120 140 160 1 8 0 am07071v1 i d 60 40 20 0 0 4 v g s (v) 8 (a) 2 6 9 8 0 100 7 5 3 1 120 140 160 1 8 0 v d s =5v am07072v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0. 8 0 0. 8 5 0.90 0.95 1.00 1.05 125 1.10 1.15 am0707 3 v1 r d s (on) 7.25 7.20 7.15 7.10 0 20 i d (a) (mohm) 10 3 0 7. 3 0 7. 3 5 v g s =10v 40 50 am07074v1
STD55N4F5 electrical characteristics doc id 15661 rev 3 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =20v i d =55a 25 12 3 0 am07075v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 ci ss co ss cr ss am07076v1 v g s (th) 0.6 0.4 0.2 0 -50 0 t j (c) (norm) -25 0. 8 75 25 50 100 125 1.0 1.2 am07077v1 r d s (on) 2.0 1.5 1.0 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 125 0 am0707 8 v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 t j =-55c t j =175c t j =25c am07079v1
test circuits STD55N4F5 8/13 doc id 15661 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STD55N4F5 package mechanical data doc id 15661 rev 3 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STD55N4F5 10/13 doc id 15661 rev 3 dim. mm. . x a m p y t . n i m 0 4 . 2 0 2 . 2 a 0 1 . 1 0 9 . 0 1 a 3 2 . 0 3 0 . 0 2 a 0 9 . 0 4 6 . 0 b 0 4 . 5 0 2 . 5 4 b 0 6 . 0 5 4 . 0 c 0 6 . 0 8 4 . 0 2 c 0 2 . 6 0 0 . 6 d 0 1 . 5 1 d 0 6 . 6 0 4 . 6 e 0 7 . 4 1 e 8 2 . 2 e 0 6 . 4 0 4 . 4 1 e 0 1 . 0 1 5 3 . 9 h 1 l 0 8 . 2 1 l 0 8 . 0 2 l 1 0 6 . 0 4 l 0 2 . 0 r v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
STD55N4F5 packaging mechanical data doc id 15661 rev 3 11/13 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
revision history STD55N4F5 12/13 doc id 15661 rev 3 6 revision history table 8. document revision history date revision changes 06-may-2009 1 first release 10-jul-2009 2 ? document status promoted from ta rget specification to preliminary data ?r ds(on) max value changed 22-jun-2010 3 document status promoted from preliminary data to datasheet
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